The TK4A50D(Q) is a 500V N-Channel MOSFET from Toshiba with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 4A and a maximum power dissipation of 30W. The device is packaged in a SC package and is suitable for through hole mounting. It is lead free and compliant with certain environmental regulations.
PackageSC
MountingThrough Hole
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Technical Specifications
Toshiba TK4A50D(Q) technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Tray |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK4A50D(Q) Datasheet
Download the complete datasheet for Toshiba TK4A50D(Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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