The Toshiba TK4A60DB(STA4,Q,M) is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 35W and a continuous drain current of 3.7A. The device has a drain to source voltage of 600V and a gate to source voltage of 30V. The input capacitance is 540pF and the fall time is 8ns. The MOSFET is available in a package quantity of 50 and is packaged in a rail/tube format.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba TK4A60DB(STA4,Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 540pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 2R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK4A60DB(STA4,Q,M) Datasheet
Download the complete datasheet for Toshiba TK4A60DB(STA4,Q,M) to view detailed technical specifications.
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