N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 3.5A continuous drain current. This single-element silicon transistor utilizes pi-MOS VII process technology and is housed in a 3-pin New PW-Mold2 through-hole package with a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 2200 mOhm at 10V, and a typical gate charge of 11 nC at 10V. The component offers a maximum power dissipation of 80W and operates within a temperature range of -55°C to 150°C.
PackageNew PW-Mold2
MountingThrough Hole
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Technical Specifications
Toshiba TK4Q60DA technical specifications.
General
| Basic Package Type | Through Hole |
| Package/Case | New PW-Mold2 |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Seated Plane Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.3 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS VII |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 3.5A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4.4V |
| Maximum Drain Source Resistance | 2200@10VmOhm |
| Typical Gate Charge @ Vgs | 11@10VnC |
| Typical Gate Charge @ 10V | 11nC |
| Typical Input Capacitance @ Vds | 490@25VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Toshiba TK4Q60DA Datasheet
Download the complete datasheet for Toshiba TK4Q60DA to view detailed technical specifications.
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