N-channel Power MOSFET featuring 600V drain-source voltage and 50A continuous drain current. This single element, enhancement mode MOSFET utilizes DTMOSII process technology and is housed in a 3-pin TO-3PW through-hole package. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 65mΩ at 10V, and a maximum power dissipation of 400W. Operating temperature range is -55°C to 150°C.
PackageTO-3PW
MountingThrough Hole
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Technical Specifications
Toshiba TK50J60U(STA1,Q) technical specifications.
General
| Package/Case | TO-3PW |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 20 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DTMOSII |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 50A |
| Material | Si |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 65@10VmOhm |
| Typical Gate Charge @ Vgs | 67@10VnC |
| Typical Gate Charge @ 10V | 67nC |
| Typical Input Capacitance @ Vds | 4050@100VpF |
| Maximum Power Dissipation | 400000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TK50J60U(STA1,Q) Datasheet
Download the complete datasheet for Toshiba TK50J60U(STA1,Q) to view detailed technical specifications.
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