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Technical Specifications
Toshiba TK55D10J1(Q) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 10.5mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK55D10J1(Q) Datasheet
Download the complete datasheet for Toshiba TK55D10J1(Q) to view detailed technical specifications.
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