The TK5A50D(Q,M) is a N-CHANNEL MOSFET from Toshiba with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5A and a drain to source breakdown voltage of 500V. The device is packaged in a TO-220-3 case and is mounted through a hole. It has a maximum power dissipation of 35W and an input capacitance of 490pF.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Toshiba TK5A50D(Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 490pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK5A50D(Q,M) Datasheet
Download the complete datasheet for Toshiba TK5A50D(Q,M) to view detailed technical specifications.
No datasheet is available for this part.