N-channel enhancement mode power MOSFET featuring 75V drain-source voltage and 60A continuous drain current. This single-element silicon transistor utilizes U-MOS IV process technology. Housed in a 3-pin TO-220SM(W) surface-mount package with plastic material, it offers a low drain-source on-resistance of 8.5 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 150W.
PackageTO-220SM(W)
MountingSurface Mount
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Technical Specifications
Toshiba TK60F08K3 technical specifications.
General
Package Family Name
TO-220
Package/Case
TO-220SM(W)
Pin Count
3
PCB
1
Tab
2Tab
Package Length (mm)
10
Package Width (mm)
10
Package Height (mm)
3.5
Seated Plane Height (mm)
3.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS IV
Maximum Drain Source Voltage
75V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
60A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
8.5@10VmOhm
Typical Gate Charge @ Vgs
75@10VnC
Typical Gate Charge @ 10V
75nC
Typical Input Capacitance @ Vds
3600@10VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Datasheet
Toshiba TK60F08K3 Datasheet
Download the complete datasheet for Toshiba TK60F08K3 to view detailed technical specifications.
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