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Technical Specifications
Toshiba TK62J60W,S1VQ technical specifications.
General
| Continuous Drain Current (ID) | 61.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 6.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Turn-Off Delay Time | 310ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK62J60W,S1VQ Datasheet
Download the complete datasheet for Toshiba TK62J60W,S1VQ to view detailed technical specifications.
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