The Toshiba TK65E10N1,S1X is a 100V power MOSFET with a maximum continuous drain current of 148A. It has a maximum power dissipation of 192W and an on-resistance of 4.8mR. The device is packaged in a TO-220-3 package and is available in a rail or tube packaging with 50 units per package. It is designed for through-hole mounting and has an input capacitance of 5.4nF.
PackageTO-220-3
Capacitance5.4E-09F
MountingThrough Hole
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Technical Specifications
Toshiba TK65E10N1,S1X technical specifications.
General
| Capacitance | 5.4E-09F |
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 148A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 5.4nF |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 4.8mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK65E10N1,S1X Datasheet
Download the complete datasheet for Toshiba TK65E10N1,S1X to view detailed technical specifications.
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