N-channel enhancement mode power MOSFET for automotive applications. Features a 40V drain-source voltage and 65A continuous drain current. This surface-mount device utilizes a TO-252 DPAK+ package with gull-wing leads and a tab for enhanced thermal performance. Key specifications include a low 4.5mOhm drain-source resistance at 10V and a maximum power dissipation of 88W.
PackageDPAK+
MountingSurface Mount
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Technical Specifications
Toshiba TK65S04K3L(L1JE,NQ) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK+ |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Pin Pitch (mm) | 2.3 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 65A |
| Material | Si |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | 63@10VnC |
| Typical Gate Charge @ 10V | 63nC |
| Typical Input Capacitance @ Vds | 2800@10VpF |
| Maximum Power Dissipation | 88000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TK65S04K3L(L1JE,NQ) Datasheet
Download the complete datasheet for Toshiba TK65S04K3L(L1JE,NQ) to view detailed technical specifications.
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