The Toshiba TK6A60W,S4VX is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 6.2A. The device has a maximum power dissipation of 30W and a gate to source voltage of 30V. It is packaged in a TO-220-3 case and is suitable for through-hole mounting.
PackageTO-220-3
Capacitance3.9E-10F
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba TK6A60W,S4VX technical specifications.
General
| Capacitance | 3.9E-10F |
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 680mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 390pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 750mR |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK6A60W,S4VX Datasheet
Download the complete datasheet for Toshiba TK6A60W,S4VX to view detailed technical specifications.
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