PackageTO-251-3
Capacitance3.9E-10F
Resistance0.82R
MountingThrough Hole
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Technical Specifications
Toshiba TK6Q60W,S1VQ technical specifications.
General
Capacitance
3.9E-10F
Package/Case
TO-251-3
Continuous Drain Current (ID)
6.2A
Drain to Source Resistance
680mR
Drain to Source Voltage (Vdss)
600V
Fall Time
7ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
390pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
820mR
Resistance
0.82R
Series
DTMOSIV
Turn-Off Delay Time
55ns
Compliance
RoHS
Compliant
Datasheet
Toshiba TK6Q60W,S1VQ Datasheet
Download the complete datasheet for Toshiba TK6Q60W,S1VQ to view detailed technical specifications.
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