N-channel enhancement mode power MOSFET featuring U-MOS IV process technology. This single element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 70A. It is housed in a 4-pin (2+2 tab) TFP surface mount package with a maximum seated plane height of 3mm. Key electrical characteristics include a maximum drain-source on-resistance of 5.6 mOhm at 10V and a typical gate charge of 62 nC. Operating temperature range spans from -55°C to 175°C.
PackageTFP
MountingSurface Mount
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Technical Specifications
Toshiba TK70X04K3Z technical specifications.
General
| Package Family Name | TFP |
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS IV |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 70A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 5.6@10VmOhm |
| Typical Gate Charge @ Vgs | 62@10VnC |
| Typical Gate Charge @ 10V | 62nC |
| Typical Input Capacitance @ Vds | 2800@10VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Toshiba TK70X04K3Z Datasheet
Download the complete datasheet for Toshiba TK70X04K3Z to view detailed technical specifications.
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