The Toshiba TK80A08K3(Q) is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 75V and a continuous drain current of 80A. The device has a drain to source resistance of 4.5mR and a maximum power dissipation of 40W. It is packaged in a SC case and is available in a lead-free version.
PackageSC
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Toshiba TK80A08K3(Q) technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Reach SVHC Compliant | Unknown |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK80A08K3(Q) Datasheet
Download the complete datasheet for Toshiba TK80A08K3(Q) to view detailed technical specifications.
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