Toshiba
TK80D08K3(Q)
TOSHIBA TK80D08K3(Q) MOSFET Transistor, N Channel, 80 A, 75 V, 3.6 mohm, 10 V, 2 V
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Toshiba TK80D08K3(Q) technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
75V
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
500
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
100W
Rds On Max
4.5mR
Reach SVHC Compliant
Unknown
Threshold Voltage
2V
Compliance
RoHS
Compliant
Datasheet
Toshiba TK80D08K3(Q) Datasheet
Download the complete datasheet for Toshiba TK80D08K3(Q) to view detailed technical specifications.
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