N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 80A continuous drain current. This single-element silicon transistor utilizes U-MOS IV process technology and is housed in a 3-pin TO-220SM(W) surface-mount package with two tabs. Key specifications include a maximum drain-source on-resistance of 7.7 mOhm at 10V, a typical gate charge of 74 nC, and a maximum power dissipation of 125W, operating across a temperature range of -55°C to 175°C.
PackageTO-220SM(W)
MountingSurface Mount
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Technical Specifications
Toshiba TK80F06K3L technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220SM(W) |
| Pin Count | 3 |
| PCB | 1 |
| Tab | 2Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 10 |
| Package Height (mm) | 3.5 |
| Seated Plane Height (mm) | 3.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS IV |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 80A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 7.7@10VmOhm |
| Typical Gate Charge @ Vgs | 74@10VnC |
| Typical Gate Charge @ 10V | 74nC |
| Typical Input Capacitance @ Vds | 3420@10VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
Datasheet
Toshiba TK80F06K3L Datasheet
Download the complete datasheet for Toshiba TK80F06K3L to view detailed technical specifications.
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