The TK8A55DA(STA4,Q,M) is a TO-220-3 packaged N-channel MOSFET with a maximum drain to source voltage of 550V and continuous drain current of 7.5A. It has a maximum power dissipation of 40W and a maximum operating temperature of 150°C. The device is suitable for through hole mounting and is available in a package quantity of 50. The TK8A55DA(STA4,Q,M) is manufactured by Toshiba and is a discrete semiconductor component.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba TK8A55DA(STA4,Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 800pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 1.07R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK8A55DA(STA4,Q,M) Datasheet
Download the complete datasheet for Toshiba TK8A55DA(STA4,Q,M) to view detailed technical specifications.
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