The Toshiba TK8A65D(STA4,Q,M) is a MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 650V and a continuous drain current of 8A. The device has a maximum power dissipation of 45W and a gate to source voltage of 30V. The TO-220-3 package is suitable for through hole mounting. The MOSFET has an input capacitance of 1.35nF and a fall time of 15ns.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba TK8A65D(STA4,Q,M) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.35nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 840mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK8A65D(STA4,Q,M) Datasheet
Download the complete datasheet for Toshiba TK8A65D(STA4,Q,M) to view detailed technical specifications.
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