Quick Jump:
Technical Specifications
Toshiba TK8Q60W,S1VQ technical specifications.
General
| Capacitance | 5.7E-10F |
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 570pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 500mR |
| Resistance | 0.5R |
| Series | DTMOSIV |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TK8Q60W,S1VQ Datasheet
Download the complete datasheet for Toshiba TK8Q60W,S1VQ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.