N-channel enhancement mode power MOSFET featuring U-MOS III process technology. This single element transistor offers a maximum drain-source voltage of 30V and a continuous drain current of 6A. Housed in a 6-pin VS package (SOT family), it supports surface mounting with dimensions of 2.9mm x 1.6mm x 0.7mm. Key electrical characteristics include a maximum drain-source on-resistance of 24 mOhm at 10V and a typical gate charge of 25 nC.
PackageVS
MountingSurface Mount
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Technical Specifications
Toshiba TPC6003(T5LIBM1) technical specifications.
General
| Package Family Name | SOT |
| Package/Case | VS |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Seated Plane Height (mm) | 0.75 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS III |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Drain Source Resistance | 24@10VmOhm |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 1250@10VpF |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPC6003(T5LIBM1) Datasheet
Download the complete datasheet for Toshiba TPC6003(T5LIBM1) to view detailed technical specifications.
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