N-channel enhancement mode power MOSFET in a 6-pin VS package, designed for surface mount applications. Features a 30V drain-source voltage rating and a 6A continuous drain current capability. Utilizes U-MOS III process technology, offering a low 24mOhm drain-source resistance at 10V. Package dimensions are 2.9mm x 1.6mm x 0.7mm, with a seated plane height of 0.75mm. Operates within a temperature range of -55°C to 150°C.
PackageVS
MountingSurface Mount
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Technical Specifications
Toshiba TPC6003(T5LIBM2) technical specifications.
General
| Package Family Name | SOT |
| Package/Case | VS |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Seated Plane Height (mm) | 0.75 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS III |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Drain Source Resistance | 24@10VmOhm |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 1250@10VpF |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPC6003(T5LIBM2) Datasheet
Download the complete datasheet for Toshiba TPC6003(T5LIBM2) to view detailed technical specifications.
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