P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 4.5A continuous drain current. This single element silicon transistor utilizes U-MOS VI process technology and is housed in a 6-pin VS package (SOT family) with surface mount configuration. Key specifications include a maximum gate-source voltage of 20V, a maximum drain-source on-resistance of 56 mOhm at 10V, and a maximum power dissipation of 2200 mW. Operating temperature range spans from -55°C to 150°C.
PackageVS
MountingSurface Mount
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Technical Specifications
Toshiba TPC6110 technical specifications.
General
Package Family Name
SOT
Package/Case
VS
Pin Count
6
PCB
6
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
0.7
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
U-MOS VI
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
4.5A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
56@10VmOhm
Typical Gate Charge @ Vgs
14@10VnC
Typical Gate Charge @ 10V
14nC
Typical Input Capacitance @ Vds
510@10VpF
Maximum Power Dissipation
2200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba TPC6110 Datasheet
Download the complete datasheet for Toshiba TPC6110 to view detailed technical specifications.
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