The TPC6111 is a single quad drain enhancement P-channel MOSFET with a maximum drain source voltage of 20V and maximum continuous drain current of 5.5A. It features a maximum power dissipation of 2200 and operates over a temperature range of -55°C to 150°C. The device is packaged in a surface mount VS configuration with a 6-pin count and measures 2.9mm in length, 1.6mm in width, and 0.7mm in height.
PackageVS
MountingSurface Mount
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Technical Specifications
Toshiba TPC6111(TE85L,F,M) technical specifications.
General
| Package Family Name | SOT |
| Package/Case | VS |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 5.5A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 10@5VnC |
| Typical Input Capacitance @ Vds | 700@10VpF |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba TPC6111(TE85L,F,M) Datasheet
Download the complete datasheet for Toshiba TPC6111(TE85L,F,M) to view detailed technical specifications.
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