N-channel Power MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current. Features U-MOS II process technology, single quad drain triple source configuration, and low 10mΩ @ 10V drain-source resistance. Housed in an 8-pin 2-6J1B surface-mount plastic package with dimensions of 5.5mm x 4.4mm x 1.5mm. Typical gate charge is 44nC @ 10V, with input capacitance of 2040pF @ 10V. Maximum power dissipation is 2400mW, operating from -55°C to 150°C.
Package2-6J1B
MountingSurface Mount
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Technical Specifications
Toshiba TPC8007-H(T2LOME1) technical specifications.
General
| Package/Case | 2-6J1B |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS II |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 13A |
| Material | Si |
| Maximum Drain Source Resistance | 10@10VmOhm |
| Typical Gate Charge @ Vgs | 44@10VnC |
| Typical Gate Charge @ 10V | 44nC |
| Typical Input Capacitance @ Vds | 2040@10VpF |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPC8007-H(T2LOME1) Datasheet
Download the complete datasheet for Toshiba TPC8007-H(T2LOME1) to view detailed technical specifications.
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