The TPC8035-H(TE12L,QM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 18A and a drain to source breakdown voltage of 30V. The device also features a drain to source resistance of 3.2mR and a power dissipation of 1.9W.
Toshiba TPC8035-H(TE12L,QM technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS | Compliant |
Download the complete datasheet for Toshiba TPC8035-H(TE12L,QM to view detailed technical specifications.
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