N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 18A continuous drain current. This surface-mount component utilizes a single quad drain triple source configuration within an 8-pin SOP package. Key electrical characteristics include a maximum drain-source on-resistance of 4.5 mOhm at 10V, with typical gate charge values of 49 nC at 10V and 26 nC at 5V. The plastic SOP package measures 5.5mm (max) in length and 4.4mm in width, with a 1.27mm pin pitch, supporting operation from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8036-H technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Material | Si |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | 49@10V|26@5VnC |
| Typical Gate Charge @ 10V | 49nC |
| Typical Input Capacitance @ Vds | 3500@10VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPC8036-H Datasheet
Download the complete datasheet for Toshiba TPC8036-H to view detailed technical specifications.
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