N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 16A continuous drain current. This surface-mount component is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. It offers a low drain-source on-resistance of 7.6mOhm at 10V and a maximum power dissipation of 1900mW, operating from -55°C to 150°C.
Toshiba TPC8047-H(TE12L,QM) technical specifications.
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