N-channel enhancement mode power MOSFET featuring 80V drain-source voltage and 13A continuous drain current. This surface-mount component is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm maximum length and 4.4mm width. Key electrical characteristics include a maximum drain-source resistance of 9.7 mOhm at 10V, typical gate charge of 85 nC at 10V, and typical input capacitance of 5800 pF at 10V. The device offers a maximum power dissipation of 1900 mW and operates across a temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8051-H(TE12L,VM technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
80V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
13A
Material
Si
Maximum Gate Threshold Voltage
2.3V
Maximum Drain Source Resistance
9.7@10VmOhm
Typical Gate Charge @ Vgs
85@10V|43@5VnC
Typical Gate Charge @ 10V
85nC
Typical Input Capacitance @ Vds
5800@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPC8051-H(TE12L,VM Datasheet
Download the complete datasheet for Toshiba TPC8051-H(TE12L,VM to view detailed technical specifications.
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