The TPC8066-H,LQ(S is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 11A and a drain to source voltage of 30V. The device features a gate to source voltage of 20V and an input capacitance of 1.1nF. It is available in a SOIC package with a packaging quantity of 2500 units per reel.
Toshiba TPC8066-H,LQ(S technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS | Compliant |
Download the complete datasheet for Toshiba TPC8066-H,LQ(S to view detailed technical specifications.
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