P-channel enhancement mode silicon power MOSFET in an 8-pin SOP package. Features a maximum drain-source voltage of 30V and a continuous drain current of 11A. Offers a low drain-source on-resistance of 13mΩ at 10V. Surface mountable with gull-wing leads, this single quad drain triple source MOSFET operates from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8103(T2LMDNSI) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Drain Source Resistance
13@10VmOhm
Typical Gate Charge @ Vgs
60@11VnC
Typical Input Capacitance @ Vds
2700@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8103(T2LMDNSI) Datasheet
Download the complete datasheet for Toshiba TPC8103(T2LMDNSI) to view detailed technical specifications.
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