P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 7A continuous drain current. This surface-mount device is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. Key electrical characteristics include a maximum drain-source on-resistance of 40mΩ at 10V, typical gate charge of 32nC, and typical input capacitance of 1440pF. The MOSFET offers a maximum power dissipation of 2400mW and operates across a temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8105-H(T2LPAVQM technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
7A
Material
Si
Maximum Drain Source Resistance
40@10VmOhm
Typical Gate Charge @ Vgs
32@10VnC
Typical Gate Charge @ 10V
32nC
Typical Input Capacitance @ Vds
1440@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TPC8105-H(T2LPAVQM Datasheet
Download the complete datasheet for Toshiba TPC8105-H(T2LPAVQM to view detailed technical specifications.
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