P-channel enhancement mode silicon power MOSFET featuring a 30V drain-source voltage and 10A continuous drain current. This single element MOSFET offers a low drain-source on-resistance of 20mΩ at 10V. Housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, it supports surface mounting with a package length of 5.5mm maximum. Key electrical characteristics include a typical gate charge of 52nC at 10V and an input capacitance of 2160pF at 10V. Operating temperature range spans from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8106-H(T2LTIP) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.5(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 20@10VmOhm |
| Typical Gate Charge @ Vgs | 52@10VnC |
| Typical Gate Charge @ 10V | 52nC |
| Typical Input Capacitance @ Vds | 2160@10VpF |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPC8106-H(T2LTIP) Datasheet
Download the complete datasheet for Toshiba TPC8106-H(T2LTIP) to view detailed technical specifications.
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