P-channel enhancement mode silicon power MOSFET featuring a 30V drain-source voltage and 10A continuous drain current. This single element MOSFET offers a low drain-source on-resistance of 20mΩ at 10V. Housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, it supports surface mounting with a package length of 5.5mm maximum. Key electrical characteristics include a typical gate charge of 52nC at 10V and an input capacitance of 2160pF at 10V. Operating temperature range spans from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8106-H(T2LTIP) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
10A
Material
Si
Maximum Drain Source Resistance
20@10VmOhm
Typical Gate Charge @ Vgs
52@10VnC
Typical Gate Charge @ 10V
52nC
Typical Input Capacitance @ Vds
2160@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8106-H(T2LTIP) Datasheet
Download the complete datasheet for Toshiba TPC8106-H(T2LTIP) to view detailed technical specifications.
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