P-channel enhancement mode power MOSFET with 40V drain-source voltage and 8A continuous drain current. Features a single quad drain triple source configuration within an 8-pin SOP package, measuring 5.5mm (max) length and 4.4mm width. Surface mountable with gull-wing leads and a 1.27mm pin pitch, this silicon component utilizes U-MOS III process technology. Maximum power dissipation is 1900mW, with an operating temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8110(T2LHLS1,Q) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
U-MOS III
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
25@10VmOhm
Typical Gate Charge @ Vgs
48@10VnC
Typical Gate Charge @ 10V
48nC
Typical Input Capacitance @ Vds
2180@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TPC8110(T2LHLS1,Q) Datasheet
Download the complete datasheet for Toshiba TPC8110(T2LHLS1,Q) to view detailed technical specifications.
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