P-channel enhancement mode silicon power MOSFET featuring a 30V drain-source voltage and 11A continuous drain current. This surface-mount transistor is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. It offers a low drain-source on-resistance of 12mΩ at 10V and a typical gate charge of 107nC. Operating temperature range is -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8111(T2LIBM2,M) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Drain Source Resistance
12@10VmOhm
Typical Gate Charge @ Vgs
107@10VnC
Typical Gate Charge @ 10V
107nC
Typical Input Capacitance @ Vds
5710@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8111(T2LIBM2,M) Datasheet
Download the complete datasheet for Toshiba TPC8111(T2LIBM2,M) to view detailed technical specifications.
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