Toshiba
TPC8117(TE12L,Q)
TRANSISTOR 18000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.9W
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Technical Specifications
Toshiba TPC8117(TE12L,Q) technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
3.9mR
Drain to Source Voltage (Vdss)
30V
Fall Time
300ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
4.6nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.9W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.9W
Radiation Hardening
No
Rds On Max
3.9mR
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba TPC8117(TE12L,Q) Datasheet
Download the complete datasheet for Toshiba TPC8117(TE12L,Q) to view detailed technical specifications.
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