TPC8120(TE12L,Q)

P-channel enhancement mode silicon power MOSFET featuring a 30V drain-source voltage and 18A continuous drain current. This single-element transistor utilizes U-MOS VI process technology and is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum gate-source voltage of 20V, a low drain-source on-resistance of 3.2 mOhm at 10V, and a typical gate charge of 180 nC. The plastic package measures 5.5mm x 4.4mm x 1.5mm, supporting a maximum power dissipation of 1900mW across an operating temperature range of -55°C to 150°C.