P-channel enhancement mode power MOSFET featuring U-MOS VI process technology. This surface-mount transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 12A. Housed in an 8-pin SOP package with gull-wing leads, it boasts a low drain-source on-resistance of 8mΩ at 10V. The component is constructed from silicon and operates within a temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8124 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
U-MOS VI
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
12A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
8@10VmOhm
Typical Gate Charge @ Vgs
104@10VnC
Typical Gate Charge @ 10V
104nC
Typical Input Capacitance @ Vds
4750@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba TPC8124 Datasheet
Download the complete datasheet for Toshiba TPC8124 to view detailed technical specifications.
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