P-channel Power MOSFET featuring 30V drain-source voltage and 16A continuous drain current. This single element device utilizes U-MOS VI process technology and is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 5 mOhm at 10V, typical gate charge of 115 nC at 10V, and typical input capacitance of 4800 pF at 10V. Operating temperature range is -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8128 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
U-MOS VI
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
16A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
5@10VmOhm
Typical Gate Charge @ Vgs
115@10VnC
Typical Gate Charge @ 10V
115nC
Typical Input Capacitance @ Vds
4800@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPC8128 Datasheet
Download the complete datasheet for Toshiba TPC8128 to view detailed technical specifications.
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