N-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 5A. It is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm in length and 4.4mm in width, with a 1.27mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 50mΩ at 10V and a maximum power dissipation of 1500mW.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8201(T2LSONY) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
50@10VmOhm
Typical Gate Charge @ Vgs
75@10VnC
Typical Gate Charge @ 10V
75nC
Typical Input Capacitance @ Vds
3530@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8201(T2LSONY) Datasheet
Download the complete datasheet for Toshiba TPC8201(T2LSONY) to view detailed technical specifications.
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