The TPC8207 is a 2 N-Channel FET with a drain to source breakdown voltage of 20V and a continuous drain current of 6A. It has a maximum power dissipation of 750mW and a drain to source resistance of 20mR. The device is packaged in a SOP package and is designed for surface mount applications. The TPC8207 operates over a temperature range of -40°C to 125°C.
Toshiba TPC8207(TE12L,Q,M) technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 22ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.01nF |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 20mR |
| Resistance | 0.02R |
| RoHS | Compliant |
Download the complete datasheet for Toshiba TPC8207(TE12L,Q,M) to view detailed technical specifications.
No datasheet is available for this part.