The TPC8208(TE12L,Q) is a 2 N-Channel MOSFET from Toshiba with a maximum drain to source voltage of 20V and a continuous drain current of 5A. It features a maximum power dissipation of 450mW and an on-resistance of 50mR. The device is packaged in a lead-free SOIC package and is suitable for surface mount applications. The operating temperature range is not specified, but the device is compliant with lead-free requirements.
PackageSOIC
Current Rating5A
MountingSurface Mount
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Technical Specifications
Toshiba TPC8208(TE12L,Q) technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8208(TE12L,Q) Datasheet
Download the complete datasheet for Toshiba TPC8208(TE12L,Q) to view detailed technical specifications.
No datasheet is available for this part.