Quick Jump:
Technical Specifications
Toshiba TPC8208(TE12L,Q,M) technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 2.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 780pF |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 50mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8208(TE12L,Q,M) Datasheet
Download the complete datasheet for Toshiba TPC8208(TE12L,Q,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
