N-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 6.4A. It is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. Key electrical characteristics include a low drain-source on-resistance of 20mΩ at 10V and typical gate charges of 14nC at 10V.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8216-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
6.4A
Material
Si
Maximum Drain Source Resistance
20@10VmOhm
Typical Gate Charge @ Vgs
14@10V|7.6@5VnC
Typical Gate Charge @ 10V
14nC
Typical Input Capacitance @ Vds
900@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8216-H Datasheet
Download the complete datasheet for Toshiba TPC8216-H to view detailed technical specifications.
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