P-channel enhancement mode power MOSFET, featuring a dual dual drain configuration with two silicon elements per chip. This surface-mount component offers a maximum drain-source voltage of 20V and a continuous drain current of 5A. Housed in an 8-pin SOP package with gull-wing leads, it has a maximum package length of 5.5mm and a pin pitch of 1.27mm. Key electrical characteristics include a maximum drain-source resistance of 30mΩ at 4.5V and a typical gate charge of 24nC at 5V.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8305(TE12L,Q,M) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
24@5VnC
Typical Input Capacitance @ Vds
2030@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TPC8305(TE12L,Q,M) Datasheet
Download the complete datasheet for Toshiba TPC8305(TE12L,Q,M) to view detailed technical specifications.
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