Dual N/P-channel enhancement mode Power MOSFET in an 8-pin SOP package. Features 30V drain-source voltage, 5A (N-channel) / 4.5A (P-channel) continuous drain current, and low on-resistance of 50mΩ (N-channel) / 35mΩ (P-channel) at 10V. Surface-mount design with gull-wing leads and a 1.27mm pin pitch. Maximum power dissipation is 1500mW, with an operating temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8402(T2LMBS-H1) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5@N Channel|4.5@P ChannelA
Material
Si
Maximum Drain Source Resistance
50@10V@N Channel|35@10V@P ChannelmOhm
Typical Gate Charge @ Vgs
16@10V@N Channel|28@10V@P ChannelnC
Typical Gate Charge @ 10V
16@N Channel|28@P ChannelnC
Typical Input Capacitance @ Vds
475@10V@N Channel|970@10V@P ChannelpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPC8402(T2LMBS-H1) Datasheet
Download the complete datasheet for Toshiba TPC8402(T2LMBS-H1) to view detailed technical specifications.
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