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Technical Specifications
Toshiba TPC8408,LQ(S technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Drain to Source Voltage (Vdss)
40V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
850pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
32mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Toshiba TPC8408,LQ(S Datasheet
Download the complete datasheet for Toshiba TPC8408,LQ(S to view detailed technical specifications.
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