The TPC8A03-H(TE12LQM) is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 17A. It has a drain to source resistance of 5.6mR and a power dissipation of 1.9W. The device is packaged in a SOP package and is designed for surface mount applications. It operates over a temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
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Technical Specifications
Toshiba TPC8A03-H(TE12LQM) technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.43nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8A03-H(TE12LQM) Datasheet
Download the complete datasheet for Toshiba TPC8A03-H(TE12LQM) to view detailed technical specifications.
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