N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 18A continuous drain current. This surface-mount transistor is housed in an 8-pin SOP package with gull-wing leads, measuring 5.5mm x 4.4mm x 1.5mm. It offers a low drain-source on-resistance of 3.6mΩ at 10V Vgs and a maximum power dissipation of 1900mW, operating from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8A04-H(TE12L,QM) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.5(Max)
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.6
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
18A
Material
Si
Maximum Drain Source Resistance
3.6@10VmOhm
Typical Gate Charge @ Vgs
56@10V|29@5VnC
Typical Gate Charge @ 10V
56nC
Typical Input Capacitance @ Vds
4400@10VpF
Maximum Power Dissipation
1900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPC8A04-H(TE12L,QM) Datasheet
Download the complete datasheet for Toshiba TPC8A04-H(TE12L,QM) to view detailed technical specifications.
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