N-channel MOSFET transistor featuring 100V drain-to-source breakdown voltage and 18A continuous drain current. Offers a low 67mΩ drain-to-source resistance at 5V gate-source voltage, with a maximum power dissipation of 45W. This surface-mount device operates within a temperature range of -55°C to 150°C and has a fast 2ns fall time. Packaged in SOP for tape and reel distribution.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
Toshiba TPCA8006-H(TE12LQM technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 67mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 780pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 67mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Width | 5mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba TPCA8006-H(TE12LQM Datasheet
Download the complete datasheet for Toshiba TPCA8006-H(TE12LQM to view detailed technical specifications.
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