N-channel MOSFET transistor featuring 100V drain-to-source breakdown voltage and 18A continuous drain current. Offers a low 67mΩ drain-to-source resistance at 5V gate-source voltage, with a maximum power dissipation of 45W. This surface-mount device operates within a temperature range of -55°C to 150°C and has a fast 2ns fall time. Packaged in SOP for tape and reel distribution.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
Toshiba TPCA8006-H(TE12LQM technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
67mR
Drain to Source Voltage (Vdss)
100V
Fall Time
2ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
780pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
5V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
67mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
5V
Width
5mm
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba TPCA8006-H(TE12LQM Datasheet
Download the complete datasheet for Toshiba TPCA8006-H(TE12LQM to view detailed technical specifications.
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