N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 23A continuous drain current. This surface-mount device utilizes a heat-sinked small-outline no-lead package (SOP Advance) with 8 pins, measuring 5x5x0.95mm. Key specifications include a maximum drain-source on-resistance of 9.4mΩ at 10V and a typical gate charge of 23nC at 10V. The component operates across a temperature range of -55°C to 150°C.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8040-H(TE12LQM) technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP Advance
Package Description
Heat Sinked Small-Outline No Lead
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
5
Package Height (mm)
0.95
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Weight (g)
0.069
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS VI-H
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
23A
Material
Si
Maximum Gate Threshold Voltage
2.3V
Maximum Drain Source Resistance
9.4@10VmOhm
Typical Gate Charge @ Vgs
23@10V|12@5VnC
Typical Gate Charge @ 10V
23nC
Typical Input Capacitance @ Vds
1700@10VpF
Maximum Power Dissipation
2800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPCA8040-H(TE12LQM) Datasheet
Download the complete datasheet for Toshiba TPCA8040-H(TE12LQM) to view detailed technical specifications.
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