
N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 23A continuous drain current. This surface-mount device utilizes a heat-sinked small-outline no-lead package (SOP Advance) with 8 pins, measuring 5x5x0.95mm. Key specifications include a maximum drain-source on-resistance of 9.4mΩ at 10V and a typical gate charge of 23nC at 10V. The component operates across a temperature range of -55°C to 150°C.
Toshiba TPCA8040-H(TE12LQM) technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP Advance |
| Package Description | Heat Sinked Small-Outline No Lead |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 5 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.069 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS VI-H |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 23A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Drain Source Resistance | 9.4@10VmOhm |
| Typical Gate Charge @ Vgs | 23@10V|12@5VnC |
| Typical Gate Charge @ 10V | 23nC |
| Typical Input Capacitance @ Vds | 1700@10VpF |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Toshiba TPCA8040-H(TE12LQM) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.